IN-SITU REAL-TIME TEMPERATURE AND THICKNESS MEASUREMENT FOR SI SIGE GROWTH ON MBE AND RTCVD SYSTEMS/

For in situ film thickness and temperature control RSPI has been prove n to be a standard measurement tool for a wide range of material combi nations (Si, GaAs, GaAlAs, GaN, InAs, InP, etc.) and technologies (MBE /CBE [1], Si oxidation [3], RTCVD [5]) leading to increased yield (e.g . from 33% up to nearly 100% for VCSEL manufacturing) and improved rep roducibility (typically 0.1% for thickness and 0.3% for temperature) [ 1]. This paper discusses the influence of MBE wafer rotation on the RS PI measurement and efforts to increase signal quality. Thin Si80Ge20 f ilms on Si have been grown in an RTCVD system, monitored by an 450 nm RSPI thickness measurement.