LATTICE ELECTRON-MICROSCOPY AND IMAGE-PROCESSING OF ION-IMPLANTED ANDLASER-ANNEALED GAAS STRUCTURES

The efficiency of the Low-Power Pulsed-Laser Annealing (LPPLA) as a tr eatment to restore the ion implantation induced crystal disorder is we ll-known, but it is still open the question regarding the way in which is possible to model the LPPLA dynamic effects. At this purpose we be lieve that a deeper knowledge about the modification of the ion-induce d extended defects (dislocations, stacking faults, clusters), as a con sequence of the LPPLA treatment, is relevant. In our opinion, a techni que suitable to gain this information could be the lattice image digit al processing. In this paper we reported the experimental results conc erning the use of this technique applied to some HRTEM images of low-d ose implanted GaAs samples. In particular, the appearance of different types of extended defects in the implanted material and their anneali ng with LPPLA have been put in evidence.