FEASIBILITY STUDY OF PHOTOCATHODE ELECTRON PROJECTION LITHOGRAPHY

Citation
Gf. Saville et al., FEASIBILITY STUDY OF PHOTOCATHODE ELECTRON PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2184-2188
Citations number
11
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
2184 - 2188
Database
ISI
SICI code
1071-1023(1995)13:6<2184:FSOPEP>2.0.ZU;2-2
Abstract
Photocathode electron projection is an electron lithography technique that may be used to pattern semiconductors at the deep submicron level . Using a robust gold cathode, mask features in the range of 0.11-0.54 mu m have been transferred to electron resist coated wafers with adeq uate depth of focus (congruent to 5 mu m) and large field of view (con gruent to 2 cm(2)). Low accelerating voltages similar to 3 keV minimiz e proximity effects, and with a mask to wafer spacing of a few millime ters, the necessary magnetic field is congruent to 0.45 T. (C) 1995 Am erican Vacuum Society.