Gf. Saville et al., FEASIBILITY STUDY OF PHOTOCATHODE ELECTRON PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2184-2188
Photocathode electron projection is an electron lithography technique
that may be used to pattern semiconductors at the deep submicron level
. Using a robust gold cathode, mask features in the range of 0.11-0.54
mu m have been transferred to electron resist coated wafers with adeq
uate depth of focus (congruent to 5 mu m) and large field of view (con
gruent to 2 cm(2)). Low accelerating voltages similar to 3 keV minimiz
e proximity effects, and with a mask to wafer spacing of a few millime
ters, the necessary magnetic field is congruent to 0.45 T. (C) 1995 Am
erican Vacuum Society.