METAL-IN80AL20SB INTERFACE FORMATION - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY

The formation of intimate, atomically clean, In-In80Al20Sb interfaces has been investigated using x-ray photoelectron spectroscopy. The atte nuation of the substrate (Sb) core levels showed anomalous behavior; i ncreasing for the first few monolayers of In deposited. This is interp reted in terms of a reaction between chemisorbed In on the c(8X2) reco nstructed In-rich In80Al20Sb surface and deposited In, to produce clus tering, so enhancing the substrate signals emanating from bulk In80Al2 0Sb. The incremental deposition of In brought about incremental shifts of the In core level binding energies, related to changes in the chem ical environment of the In. For the other bulk core levels examined, n o further shifts were resolved, indicating that the Fermi level at the In80Al20Sb surface is pinned prior to metallization. (C) 1995 America n Vacuum Society.