EXCIMER-LASER ASSISTED ETCHING OF ALGAAS AND GAAS

Laser assisted etching of AlGaAs and GaAs by chlorine using ArF and Kr F excimer lasers was investigated. The etching rate of AlGaAs was show n to be larger than that of GaAs. Quadrupole mass spectroscopy analysi s of the etching products for KrF assisted etching showed intense Ga-l and As+ signals from AlGaAs. It is suggested that a laser-induced neu tral atom desorption process is enhanced in the AlGaAs etching. Hall m easurements of a shallow channel heterostructure sample and GaAs Schot tky diode characterization demonstrated the low damage of the etching process. The etching profile was examined by scanning electron microsc opy and feasibility for field effect transistor gate recess etching wa s shown. (C) 1995 American Vacuum Society.