Kk. Ko et Sw. Pang, PLASMA PASSIVATION OF ETCH-INDUCED SURFACE DAMAGE ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2376-2380
Various plasma passivation techniques for removal of etch-induced dama
ge on GaAs have been studied. It was found that a Cl-2 plasma generate
d with an electron cyclotron resonance source can efficiently remove d
ry etch-induced damage with minimal etching of the GaAs. Complete reco
very of the electrical characteristics of both the Schottky diodes and
unalloyed transmission lines was found with a 30 s Cl-2 plasma passiv
ation at 25 degrees C. The chlorine reactive species used for passivat
ion were generated with 50 W microwave power at 2 mTorr without any rf
power applied at the stage. The Cl-2 passivated surface was thermally
stable up to 450 degrees C. Similar recovery was also observed for di
odes passivated with a N-2 plasma. Compared to Cl-2, however, N-2 plas
ma passivation requires a higher temperature (350 degrees C) and highe
r microwave power (500 W). Capacitance-voltage measurements show that
the presence of H-2 in the plasma during passivation results in dopant
depletion near the surface, but the dopants can be reactivated after
annealing at temperature greater than or equal to 450 degrees C for 3
min. Plasma passivation with H2S was found to result in a partial reco
very of the electrical characteristics for the etched diodes and trans
mission lines. Annealing at 300 degrees C is also required after H2S p
lasma passivation to desert, the excess S on the GaAs surface. Changes
in the defect density as a function of the conditions used for passiv
ation have been correlated to Schottky diode characteristics. (C) 1995
American Vacuum Society.