T. Akimoto et al., REACTIVE ION ETCHING LAG ON HIGH-RATE OXIDE ETCHING USING HIGH-DENSITY PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2390-2393
In this article, reactive ion etching (RIE) lag effect dependence on t
otal gas flow in contact hole etching is first investigated at a high
oxide etch rate using high density plasma. We used surface wave couple
d plasma apparatus, which achieves a high density of over 10(11) cm(-3
) and a high oxide etch rate of over 1 mu m/min. In the high gas flow
etching process, a strong RIE lag is observed. However the low gas flo
w etching process suppresses the RIE lag. Total gas flow dominates the
RIE-lag effect; and the oxygen of the etching product plays an import
ant role for reducing the RIE-lag effect. (C) 1995 American Vacuum Soc
iety.