Wk. Lo et al., FIELD-EMISSION PROPERTIES OF SELF-SHIELDED TUNGSTEN SOURCES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2441-2444
The electron emission properties of self-shield W tips were studied by
field emission microscopy and spectroscopy. Self-shielded tips were f
ormed by focused ion beam milling an annular depression on the apex of
an electrochemically etched W[111] tip. The resultant tip structure c
onsists of a flat bottomed crater (the outer rim of which forms the sh
ielding electrode) with a central protrusion (the emitter). In situ pr
ocessing consisted of moderate thermal flashing and partial buildup. S
ignificantly greater angular emission current densities were measured,
as compared to both unshielded W[111] built-up tips and standard W[31
0] tips. Energy analysis of the emitted electrons showed no deviations
from normal W[111] emission. Self-shielding may offer a generally app
licable method for increasing the brightness of field emission sources
in a variety of electron optical instruments. (C) 1995 American Vacuu
m Society.