Im. Templeton et Hg. Champion, FOCUSED ION-BEAM LINE-PROFILES - A STUDY OF SOME FACTORS AFFECTING BEAM BROADENING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2603-2606
The current-density profile of a focused ion beam (FIB) has a central
peak accompanied by broader ''wings'' that, while unimportant in litho
graphic applications, can lead to unwanted effects during an implantat
ion operation. The origin of the wings, and hence the best way to mini
mize them, is not clear and needs further study. We have measured the
line profiles of several of the ions available in our FIB machine as a
function of a number of variables, under ultrahigh vacuum (UHV) condi
tions. No effects are observed from changes in emission current or del
iberate defocusing of the objective lens. There are some changes with
beam aperture and/or current, but the biggest differences seem to be a
ssociated with a change of source type and hence, possibly, with a cha
nge in the source/extractor configuration or in the alloy and the emis
sion process. The wing amplitudes are appreciably lower than many prev
iously observed, and their profiles, at least for the lighter ions stu
died (Be++, Be+, and B+), are Gaussian rather than exponential. It see
ms possible that our UHV conditions may have eliminated a scattering m
echanism responsible for the larger, exponential wings previously obse
rved. The corresponding beam and rectangle-edge profiles have been cal
culated. (C) 1995 American Vacuum Society.