FIRST-ORDER GAIN-COUPLED (GA,IN)AS (AL,GA)AS DISTRIBUTED-FEEDBACK LASERS BY FOCUSED ION-BEAM IMPLANTATION AND IN-SITU OVERGROWTH/

First-order gain-coupled distributed feedback lasers have been fabrica ted in the (Ga,In)As/(Al,GA)As material system by maskless patterning with focused ion beam implantation. The laser devices are operating at 77 K and room temperature at emission wavelengths between 1.0 and 0.7 mu m. The structures obtained are thermally stable up to annealing te mperatures of 800 degrees C. A full in situ processing of gain-coupled distributed feedback laser structures was for the first time successf ully demonstrated. This process includes molecular beam epitaxy, grati ng patterning by focused ion beam and epitaxial overgrowth. All proces sed lasers show single mode emission at all operating conditions as ex pected for gain-coupled lasers. (C) 1995 American Vacuum Society.