FABRICATION OF SUB-10 NM SILICON TIPS - A NEW APPROACH

Authors
HUQ SE CHEN L PREWETT PD
Citation
Se. Huq et al., FABRICATION OF SUB-10 NM SILICON TIPS - A NEW APPROACH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2718-2721
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
2718 - 2721
Database
ISI
SICI code
1071-1023(1995)13:6<2718:FOSNST>2.0.ZU;2-1
Abstract
Nanometer scale silicon tips are becoming increasingly important for u se as field emitters. Applications include high resolution field emiss ion displays acid ultrahigh-speed devices. Of crucial importance is th e precise control of tip shape and size if field emitters are to be us ed as microelectronic elements. This article reports on the fabricatio n procedure of silicon based gridded field emitter tips, using a new f abrication route which eliminates the need for an oxidation sharpening step. (C) 1995 American Vacuum Society.