COMBINING AND MATCHING OPTICAL, ELECTRON-BEAM, AND X-RAY LITHOGRAPHIES IN THE FABRICATION OF SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CIRCUITS WITH 0.1 AND SUB-0.1 MU-M FEATURES

Authors
YANG IY SILVERMAN S FERRERA J JACKSON K CARTER JM ANTONIADIS DA SMITH HI
Citation
Iy. Yang et al., COMBINING AND MATCHING OPTICAL, ELECTRON-BEAM, AND X-RAY LITHOGRAPHIES IN THE FABRICATION OF SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CIRCUITS WITH 0.1 AND SUB-0.1 MU-M FEATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2741-2744
Citations number
2
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
2741 - 2744
Database
ISI
SICI code
1071-1023(1995)13:6<2741:CAMOEA>2.0.ZU;2-7
Abstract
Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal-oxide-semiconductor circ uits with 0.1 and sub-0.1 mu m features