FABRICATION OF CDZNSE ZNSE QUANTUM DOTS AND QUANTUM WIRES BY ELECTRON-BEAM LITHOGRAPHY AND WET CHEMICAL ETCHING/

We have developed a versatile and low-damage technology to realize qua ntum dots and quantum wires based on CdxZn1-xSe/ZnSe heterostructures. Electron beam lithography was used for pattern definition. The patter n transfer into the semiconductor was performed by a wet etch process based on a K2Cr2:HBr:H2O solution. Preferential etching along crystall ographic planes leads to well-defined sidewalls of the freestanding do t and wire structures. Dot sizes down to 28 nm and wire sizes down to 13 nm have been achieved. High photoluminescence efficiencies, even in the narrowest structures, allow the study of lateral confinement effe cts. We observe a size dependent blueshift of up to 20 meV in the phot oluminescence emission spectrum of the narrowest nanostructures. The m easured energy shifts can be modeled based on a rectangular lateral po tential well and the measured sizes of the structures. (C) 1995 Americ an Vacuum Society.