FABRICATION OF MICROSTRUCTURES FOR STUDIES OF ELECTROMIGRATION IN SUB-0.25 MU-M METAL INTERCONNECTIONS

Authors
LEE KY HU CK SHAW T KUAN TS
Citation
Ky. Lee et al., FABRICATION OF MICROSTRUCTURES FOR STUDIES OF ELECTROMIGRATION IN SUB-0.25 MU-M METAL INTERCONNECTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2869-2874
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
2869 - 2874
Database
ISI
SICI code
1071-1023(1995)13:6<2869:FOMFSO>2.0.ZU;2-T
Abstract
Electromigration test structures consisting of 0.1-0.5-mu m-wide and 0 .25-mu m-thick Al(4%Cu) wires and W contacts have been fabricated on 7 0-nm-thick Si3N4 membranes using electron-beam lithography and reactiv e-ion etching. Observation of grain structure evolution with electromi gration in these wires by transmission electron microscopy is reported . It is shown that dissolution of Al2Cu grains is accompanied by the g rowth in neighboring Al grains. (C) 1995 American Vacuum Society.