Rl. Kostelak et al., APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE RESIST FOR ALL-DRY 193NM DEEP-ULTRAVIOLET PROCESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2994-2999
Preliminary experiments employing plasma polymerized methylsilane (PPM
S) as a single and bilayer resist system demonstrated that the resist
process developed at 248 nm is extendible for application at 193 nm, P
PMS exhibited excellent photosensitivity with efficient photo-oxidativ
e bleaching when exposed to 193 nm radiation in air. PPMS as thick as
200 nm demonstrated complete bleaching throughout the film. A nitrogen
atmosphere was found to quench the photo-oxidative bleaching, However
, upon switching the gas ambient to air, the photo-oxidative bleaching
rapidly proceeded to completion. Both positive- and negative-tone ima
ges were achieved with PPMS at 193 nm depending upon the development p
rocess. Using negative-tone development in a chlorine plasma, 0.2 mu m
line/spaces were resolved in 100 nm films at an exposure dose of 20 m
J/cm(2) and with a depth of focus of nearly 1.0 mu m. (C) 1995 America
n Vacuum Society.