MICROMACHINING APPLICATIONS OF A HIGH-RESOLUTION ULTRATHICK PHOTORESIST

Authors
LEE KY LABIANCA N RISHTON SA ZOLGHARNAIN S GELORME JD SHAW J CHANG THP
Citation
Ky. Lee et al., MICROMACHINING APPLICATIONS OF A HIGH-RESOLUTION ULTRATHICK PHOTORESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3012-3016
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
3012 - 3016
Database
ISI
SICI code
1071-1023(1995)13:6<3012:MAOAHU>2.0.ZU;2-N
Abstract
This article describes a new negative-tone of photoresist, SU-8, for u ltrathick layer applications. An aspect ratio of 10:1 has been achieve d using near-ultraviolet lithography in a 200-mu m-thick layer. The us e of this resist for building tall micromechanical. structures by deep silicon reactive-ion etching and electroplating is demonstrated. Usin g SU-8 stencils, etched depths of >200 mu m in Si and electroplated 13 0-mu m-thick Au structures with near-vertical sidewalls have been achi eved. (C) 1995 American Vacuum Society.