REACTION MODELING OF CHEMICALLY AMPLIFIED RESISTS FOR ARF EXCIMER-LASER LITHOGRAPHY

The deprotection and dissolution reactions for the ArF chemically ampl ified resist, consisting of a new alicyclic terpolymer with tricyclode canyl groups and new afkylsulfonium salts are analyzed quantitatively. The deprotection of the tetrahydropyranyl groups is analyzed by Fouri er transform infrared measurement, and this analysis shows that the or der of acid reaction (1.4) and acid lifetime (1000 s) are the same as in other KrF resist systems. Furthermore, this analysis of dissolution behavior demonstrated that the new polymer has a dissolution rate rat io more than 1000 and a slope similar to that of the conventional novo lac resist. These characteristics indicate that the performance of thi s new terpolymer system is satisfactory for use in lithography. (C) 19 95 American Vacuum Society.