FABRICATION OF SUB-30 NM MASKS FOR X-RAY NANOLITHOGRAPHY

Citation
Am. Haghirigosnet et al., FABRICATION OF SUB-30 NM MASKS FOR X-RAY NANOLITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3066-3069
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
13
Issue
6
Year of publication
1995
Pages
3066 - 3069
Database
ISI
SICI code
1071-1023(1995)13:6<3066:FOSNMF>2.0.ZU;2-3
Abstract
For the study of the ultimate resolution limits of x-ray nanolithograp hy, i.e., the contact printing of features smaller than 30 n m, the bi ggest task is the production of x-ray nanomasks. The fabrication of su ch conventional masks with features as small as 12 nm for isolated dot s and 25 nm for isolated lines is reported. High-energy electron beam lithography, using a transmission electron microscope operating at a v oltage of 200 kV was carried out in a 400-nm-thick single resist layer with an electron probe of 1 nn in diameter. The ability of gold plati ng to enter very narrow structures is demonstrated here: 12 nm width a bsorber features with a thickness of 360 nm are obtained. We demonstra te that sub-30 nm features can be routinely produced with aspect ratio s as high as 15 with a good process latitude. (C) 1995 American Vacuum Society.