EXTREMELY REDUCED DISLOCATION DENSITY IN SIXGE1-X SINGLE-CRYSTALS GROWN BY THE FLOAT-ZONE TECHNIQUE

Authors
WOLLWEBER J SCHULZ D SCHRODER W
Citation
J. Wollweber et al., EXTREMELY REDUCED DISLOCATION DENSITY IN SIXGE1-X SINGLE-CRYSTALS GROWN BY THE FLOAT-ZONE TECHNIQUE, Journal of crystal growth, 158(1-2), 1996, pp. 166-168
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
158
Issue
1-2
Year of publication
1996
Pages
166 - 168
Database
ISI
SICI code
0022-0248(1996)158:1-2<166:ERDDIS>2.0.ZU;2-F
Abstract
Using the crucible-free float zone technique single crystals were grow n from silicon-germanium solid solutions in the [111] direction. No di slocations could be observed either by epd measurements or by X-ray to pography or by IR-transmission microscopy of copper-decorated samples. The diameter was about 16 mm and the maximum germanium concentration ran up to 5.4 at%.