CRYSTALLINE QUALITY OF SI EPILAYERS INFLUENCED BY SB DOPING

Authors
LU XK JIANG ZM HUANG DM ZHU HJ ZHANG XJ WANG X
Citation
Xk. Lu et al., CRYSTALLINE QUALITY OF SI EPILAYERS INFLUENCED BY SB DOPING, Journal of crystal growth, 158(1-2), 1996, pp. 169-173
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
158
Issue
1-2
Year of publication
1996
Pages
169 - 173
Database
ISI
SICI code
0022-0248(1996)158:1-2<169:CQOSEI>2.0.ZU;2-W
Abstract
Reflection high energy electron diffraction and Raman scattering show that the crystalline quality of Sb-doped epilayers is strongly depende nt on the doping conditions. Surface roughening, which is induced by s urface segregation of the dopants during growth, degrades the quality of the film grown and develops with growth. Surface roughening could b e explained by a two-state-exchange model of Sb segregation.