THIN-FILM SILICON-ON-INSULATOR SUBSTRATES AND THEIR APPLICATION TO INTEGRATED-CIRCUITS

Thin film silicon on insulator (TFSOI) devices have been studied for y ears. The advantages of TFSOI devices include: a reduction in junction capacitance, potentially lower junction leakage, a simpler process, a nd many other well documented advantages. However, other than some mil itary/space applications, TFSOI circuits are not currently available i n commodity products. One of the reasons TFSOI circuits are not wide s pread is that there has not been a reliable source of TFSOI substrates . Recently, however, several suppliers of TFSOI substrates, both SIMOX and bonded and etch-backed wafers (BESOI), have made significant impr ovements in their material quality and are increasing capacity to meet expected demands. In this paper, we will discuss the major materials issues and how these issues impact either the TFSOI device performance or the process integration. In addition, we will present gate oxide i ntegrity data as well as device results from these TFSOI substrates.