Kg. Ressler et al., THE DEVELOPMENT OF BIAXIAL ALIGNMENT IN YTTRIA-STABILIZED ZIRCONIA FILMS FABRICATED BY ION-BEAM-ASSISTED DEPOSITION, Journal of electronic materials, 25(1), 1996, pp. 35-42
Yttria-stabilized zirconia (YSZ) films were deposited using ion assist
ed, electron beam deposition (IBAD) on Pyrex, quartz, Hastelloy, and p
olycrystalline zirconia substrates. Film orientation was studied as a
function of IBAD fabrication conditions. Film texture from several pop
ulations of biaxially aligned grains has been observed. The ion beam i
s shown to induce biaxial alignment of all grain orientations. Specifi
cally, grains with (200), (311), and (111) normal to the substrate sur
face are biaxially aligned. The ion beam induces biaxial alignment at
all angles of incidence, not just those corresponding to YSZ channelin
g directions. The development of (200) biaxial alignment on Pyrex is e
xamined as a function of thickness. Biaxially aligned IBAD YSZ films w
ere deposited on amorphous and polycrystalline substrates without acti
ve heating. Biaxial alignment development with IBAD is shown to be con
sistent with a previously proposed growth and extinction model.