THE DEVELOPMENT OF BIAXIAL ALIGNMENT IN YTTRIA-STABILIZED ZIRCONIA FILMS FABRICATED BY ION-BEAM-ASSISTED DEPOSITION

Citation
Kg. Ressler et al., THE DEVELOPMENT OF BIAXIAL ALIGNMENT IN YTTRIA-STABILIZED ZIRCONIA FILMS FABRICATED BY ION-BEAM-ASSISTED DEPOSITION, Journal of electronic materials, 25(1), 1996, pp. 35-42
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
25
Issue
1
Year of publication
1996
Pages
35 - 42
Database
ISI
SICI code
0361-5235(1996)25:1<35:TDOBAI>2.0.ZU;2-3
Abstract
Yttria-stabilized zirconia (YSZ) films were deposited using ion assist ed, electron beam deposition (IBAD) on Pyrex, quartz, Hastelloy, and p olycrystalline zirconia substrates. Film orientation was studied as a function of IBAD fabrication conditions. Film texture from several pop ulations of biaxially aligned grains has been observed. The ion beam i s shown to induce biaxial alignment of all grain orientations. Specifi cally, grains with (200), (311), and (111) normal to the substrate sur face are biaxially aligned. The ion beam induces biaxial alignment at all angles of incidence, not just those corresponding to YSZ channelin g directions. The development of (200) biaxial alignment on Pyrex is e xamined as a function of thickness. Biaxially aligned IBAD YSZ films w ere deposited on amorphous and polycrystalline substrates without acti ve heating. Biaxial alignment development with IBAD is shown to be con sistent with a previously proposed growth and extinction model.