DEPOSITION AND SURFACE-TREATMENT WITH INTENSE PULSED ION-BEAMS

Citation
Jc. Olson et al., DEPOSITION AND SURFACE-TREATMENT WITH INTENSE PULSED ION-BEAMS, Journal of electronic materials, 25(1), 1996, pp. 81-85
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
25
Issue
1
Year of publication
1996
Pages
81 - 85
Database
ISI
SICI code
0361-5235(1996)25:1<81:DASWIP>2.0.ZU;2-W
Abstract
Intense pulsed ion beams (500 keV, 30 kA, 0.5 mu s) are being investig ated for materials processing. Demonstrated and potential applications include film deposition, glazing and joining, alloying and mixing, cl eaning and polishing, corrosion improvement, polymer surface treatment s, and nanophase powder synthesis. Initial experiments at Los Alamos h ave emphasized thin-film formation by depositing beam ablated target m aterial on substrates. We have deposited films with complex stoichiome try such as YBaxCuxO7-x and formed diamondlike-carbon films. Instantan eous deposition rates of 1 mm/s have been achieved because ofthe short ion range (typically 1 mu m), excellent target coupling, and the inhe rently high energy of these beams. Currently the beams are produced in single shot uncomplicated diodes with good electrical efficiency. Hig h-voltage modulator technology and diodes capable of repetitive firing , needed for commercial application, are being developed.