A STUDY OF THE ION-IMPLANTATION DAMAGE AND ANNEALING BEHAVIOR IN GASB

The effects of damages produced by implantation of Te, Er, Hg, and Pb ions into undoped (100) GaSb single crystals and their recovery by Rut herford backscattering (RBS)/channeling were investigated. The implant ations with dosages in the range of 10(13) to 10(15) ions/cm(2) were c arried out at liquid nitrogen temperature, at energies corresponding t o a projected range of 447 Angstrom in GaSb. Near surface damage equiv alent to that of an amorphous layer was observed even at lower doses. The samples were annealed at 600 degrees C for different durations, wi th the Te implanted sample of the lowest dosage exhibiting the best re covery (chi(min) = 11%) compared to others. This value of chi(min) nea rly corresponds to that of the virgin crystal. Examination of the surf ace morphology as a function of mass, dosage, and annealing duration r evealed that it was strongly influenced by the dosage of the implanted ions.