CHARACTERIZATION AND MODELING OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OF SILICON

Authors
BASHIR R NEUDECK GW HAW Y KVAM EP
Citation
R. Bashir et al., CHARACTERIZATION AND MODELING OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 928-935
Citations number
19
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
928 - 935
Database
ISI
SICI code
1071-1023(1995)13:3<928:CAMOSD>2.0.ZU;2-E