MEMORY APPLICATIONS BASED ON FERROELECTRIC AND HIGH-PERMITTIVITY DIELECTRIC THIN-FILMS

Several metal oxide perovskites and Bi layered perovskites are of subs tantial interest for integrated circuit memories. Strontium titanate, barium strontium titanate, and lead zirconate titanate based paraelect rics are of particular interest for dynamic memory applications since they have high charge storage densities, low leakage currents, and res istance against time dependent dielectric breakdown sufficient to achi eve gigabit densities and beyond. The high remanent polarization of fe rroelectric lead zirconate titanate and strontium bismuth tantalate ho ld out the promise of low-voltage, high-speed, non-volatile memories. Advances are being made in the reliability of ferroelectric memories.