FERROELECTRIC CAPACITORS FOR INTEGRATED-CIRCUITS

The sol-gel processing of a number of ferroelectric films is discussed emphasizing the issues of obtaining electrical properties critical fo r their applications. The effect of lead excess in solution prepared b y the electrochemical techniques on structural and electrical properti es of PZT films are discussed. The barium strontium titanate (BST), st rontium titanate-zirconate (STZ) and zirconium-stannate titanate (ZST) films were prepared by sol-gel techniques for the use in dynamic rand om access memories (DRAMs) and millimeter microwave integrated circuit s (MMICs).