REACTIVE ION ETCHING OF PT PZT/PT FERROELECTRIC THIN-FILM CAPACITORS IN HIGH-DENSITY DECR PLASMA/

One of the key processing issues involved in the integration of Pt/PZT /Pt ferroelectric capacitors on silicon-based integrated circuits is d ry etching of the ceramic film and associated electrodes. In this work , using a high density DECR plasma and in a CF4/Cl-2 or CF2Cl2 chemist ries, we have evaluated the effects of temperature, microwave and RF p ower on Pt and PZT etch rates. As each component of the PZT film can b e expected to form compounds with differents volatilities, we mainly f ocused our work on the use of a mass spectrometry technique to monitor , in different fluorine, chlorine and bromine chemistries, the volatil e species generated during dry etching.