INTEGRATED THIN-FILM PZT PYROELECTRIC DETECTOR ARRAYS

Integration of thin film pyroelectrics with CMOS readout circuitry on silicon offers a route to low cost, wafer scale, fabrication of room t emperature infrared imaging detector arrays. The performance achievabl e using thin film ferroelectrics of the lead zirconate titanate system is discussed theoretically, and is compared with that of existing arr ays based upon thinned pyroelectric ceramic. Targets on radiation abso rption, thermal isolation and detector material properties are derived , which will need to be mel to improve on the sensitivity of these exi sting devices. The development of the deposition of PZT from solution is described, at temperatures compatible with the CMOS circuitry and o n test structures similar to those required for imaging arrays.