PYROELECTRIC PROPERTIES OF THIN FERROELECTRIC-FILMS AND THEIR APPLICATIONS FOR INTEGRATED-CIRCUITS

Methods and results of experimental investigations of pyroelectric eff ects in thin ferroelectric films are discussed. The PZT films were pre pared by the sol-gel techniques on oxidized silicon substrates with pl atinum electrodes at various temperature regimes. Pyroelectric coeffic ients of thin films were measured with the use of quasi-static and low -frequency sine-shaped thermal wave methods. It is shown that pyroelec tric coefficient depends upon the initial polarization. The value of t he coefficient varies from +2.10(-8) to -2.10(-8) C/Kcm(2) as the pola rization voltage is changed from -8 to +8 V. The pyroelectric hysteres is phenomena may be used for the creation of new types of integrated d evices. The circuit for multiplication Df two signals with the use of a pyroelectric active element and also the pyroelectric memory IC are discussed.