EPITAXIAL-GROWTH OF LINBO3 THIN-FILMS ON (001)SAPPHIRE BY PULSED-LASER DEPOSITION

Authors
AUBERT P GARRY G BISARO R OLIVIER J LOPEZ JG URLACHER C
Citation
P. Aubert et al., EPITAXIAL-GROWTH OF LINBO3 THIN-FILMS ON (001)SAPPHIRE BY PULSED-LASER DEPOSITION, Microelectronic engineering, 29(1-4), 1995, pp. 107-110
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
29
Issue
1-4
Year of publication
1995
Pages
107 - 110
Database
ISI
SICI code
0167-9317(1995)29:1-4<107:EOLTO(>2.0.ZU;2-#
Abstract
LiNbO3 thin films have been deposited on c-cut single crystalline sapp hire substrates (alpha-Al2O3) by the pulsed laser deposition technique . Crystalline quality and structural properties have been determined u sing Rutherford backscattering spectroscopy (RES) and x-ray diffractio n experiments. Under optimised conditions, the (001) epitaxial growth has been obtained with some grain misorientations in the plane and an average surface roughness of about 2 nm as measured by atomic force mi croscopy (AFM).