DOMAIN-WALL AND INTRINSIC CONTRIBUTIONS TO THE DIELECTRIC RESPONSE OFEPITAXIAL FERROELECTRIC-FILMS

Authors
PERTSEV NA ARLT G ZEMBILGOTOV AG
Citation
Na. Pertsev et al., DOMAIN-WALL AND INTRINSIC CONTRIBUTIONS TO THE DIELECTRIC RESPONSE OFEPITAXIAL FERROELECTRIC-FILMS, Microelectronic engineering, 29(1-4), 1995, pp. 135-140
Citations number
24
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
29
Issue
1-4
Year of publication
1995
Pages
135 - 140
Database
ISI
SICI code
0167-9317(1995)29:1-4<135:DAICTT>2.0.ZU;2-V
Abstract
Domain-wall and intrinsic contributions to the dielectric response of epitaxial ferroelectric thin films are analysed theoretically. It is s hown that the contribution caused by translational vibrations of 900 d omain walls must be substantial in common heterostructures. The influe nce of internal stresses existing in the strained epitaxy on the intri nsic dielectric response is considered for single-domain films.