EXPERIMENTAL-STUDY AND MODELING OF SWITCHING PROCESSES IN FERROELECTRIC THIN-FILMS

Citation
Vi. Petrovsky et al., EXPERIMENTAL-STUDY AND MODELING OF SWITCHING PROCESSES IN FERROELECTRIC THIN-FILMS, Microelectronic engineering, 29(1-4), 1995, pp. 149-152
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
29
Issue
1-4
Year of publication
1995
Pages
149 - 152
Database
ISI
SICI code
0167-9317(1995)29:1-4<149:EAMOSP>2.0.ZU;2-X
Abstract
An impact of different factors on the shape of dielectric hysteresis l oop in ferroelectric thin films is discussed. The factors include: pol ycrystallinity and disorientation of polarization directions, polariza tion nonuniformity and depolarization fields, contact potential differ ence and interaction of volume impurity centers with polarization fiel d. A comparison between model conclusions and experimental data show t hat with account of the interaction between polarization and internal electric field one can explain the nature of all main distortions of t he dielectric hysteresis loop in thin films at realistic parameters of the layers. The results obtained permit to explain the distortions pe culiar to real hysteresis loops and also to obtain quality parameters of the samples, which are important for making improvement in the film preparation techniques.