ELECTRODE INVESTIGATION AND ELECTRICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED PB(ZR,TI)O-3

The platinum is one of the few metals very often employed for contacti ng high permittivity materials. In this paper, we focused our attentio n on the growth, the microstructure and the electrical behaviour of Pt thin films deposited by RF magnetron sputtering on the TiN/Ti/BPSG/Si structure. It is found that 0.5 Pa and 450 degrees C are the best con ditions to obtain a Pt film with low resistivity (10 mu Omega.cm), goo d density (21 g/cm(3)) and a strong texture (111). PZT thin films depo sited by RF magnetron sputtering on such electrode and annealed at 700 degrees C during 30 secondes in O-2 ambient present the desired perov skite structure and promising electrical properties (Ps=50 mu C/cm(2), Pr=33 mu C/cm(2)) at 5V.