STRESSES IN RU PBZR0.4TI0.6O3/RU THIN-FILM STACKS FOR INTEGRATED FERROELECTRIC CAPACITORS/

Authors
SPIERINGS GACM BREED JM ULENAERS MJE VANVELDHOVEN PJ LARSEN PK
Citation
Gacm. Spierings et al., STRESSES IN RU PBZR0.4TI0.6O3/RU THIN-FILM STACKS FOR INTEGRATED FERROELECTRIC CAPACITORS/, Microelectronic engineering, 29(1-4), 1995, pp. 235-238
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
29
Issue
1-4
Year of publication
1995
Pages
235 - 238
Database
ISI
SICI code
0167-9317(1995)29:1-4<235:SIRPTS>2.0.ZU;2-K
Abstract
Ru and RuO2 have recently been introduced as electrode materials for i ntegrated ferroelectric capacitors. Compared with Pt electrodes, they present the advantage of a higher endurance of the capacitor under rep eated pulse switching. The stresses in sputter-deposited Ru bottom and top electrodes and in PbZr0.4Ti0.6O3 films deposited using organometa llic chemical vapor deposition have been studied in the as-deposited s tate and in-situ during annealing treatments. It was observed that an annealing treatment of the Ru/PbZr0.4Ti0.6O3/Ru stack influences the s tress in the PbZr0.4Ti0.6O3 film.