Gacm. Spierings et al., STRESSES IN RU PBZR0.4TI0.6O3/RU THIN-FILM STACKS FOR INTEGRATED FERROELECTRIC CAPACITORS/, Microelectronic engineering, 29(1-4), 1995, pp. 235-238
Ru and RuO2 have recently been introduced as electrode materials for i
ntegrated ferroelectric capacitors. Compared with Pt electrodes, they
present the advantage of a higher endurance of the capacitor under rep
eated pulse switching. The stresses in sputter-deposited Ru bottom and
top electrodes and in PbZr0.4Ti0.6O3 films deposited using organometa
llic chemical vapor deposition have been studied in the as-deposited s
tate and in-situ during annealing treatments. It was observed that an
annealing treatment of the Ru/PbZr0.4Ti0.6O3/Ru stack influences the s
tress in the PbZr0.4Ti0.6O3 film.