Rd. Klissurska et al., MICROSTRUCTURE OF PZT SOL-GEL FILMS ON PT SUBSTRATES WITH DIFFERENT ADHESION LAYERS, Microelectronic engineering, 29(1-4), 1995, pp. 297-300
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electr
odes and the deposition temperature of the metallization on the nuclea
tion and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is r
eported. Several different PZT annealing profiles were simultaneously
investigated to determine the role of PZT annealing on resultant PZT f
ilm microstructures for a given metallization. The adhesion layer was
found to primarily influence PZT grain size. Largest grain sizes were
observed for substrate structures with TiO2 adhesion layers. Slower he
ating rates resulted in rosette type structures and a large volume of
residual pyrochlore, particularly in the case of TiO2 adhesion layers,
while yielding only a grain size increase on Ti and Ta bonded substra
tes. These results were correlated to the stability of the adhesion la
yers in terms of diffusion through Pt and thus changes in the chemistr
y and structure of the film/Pt interface where the perovskite nucleati
on was observed to occur. The Pt metallizations were found to be more
strongly (111) textured on the purely metallic adhesion layers and ind
ependent of the adhesion layer deposition temperature. PZT texture was
found to be influenced by adhesion layer deposition temperature and P
ZT annealing profile. The perovskite texture was altered through annea
ling conditions only on TiO2 bonded substrates. The above results sugg
ested a reduction of the number of perovskite nucleation sites on meta
llizations with TiO2 adhesion layer. This result is in agreement with
Rutherford backscattering evidence from previous investigations.