CHARACTERIZATION OF LOW-ENERGY ION-INDUCED DAMAGE USING THE MULTIPLE-QUANTUM-WELL PROBE TECHNIQUE WITH AN INTERVENING SUPERLATTICE

Observations of low energy ion-induced damage of III-V semiconductor m aterials indicate that the ion damage penetrates much more deeply than simple projected ion range theory would suggest. Our present experime nts are aimed to investigate two proposed mechanisms of this low energ y, long range ion-induced damage: namely, (1) ion channeling and (2) d efect generation and diffusion. Accordingly, we have designed a set of well-controlled ion exposure experiments based on the multiple quantu m well (MQW) probe technique. Our experimental approach incorporates b oth the use of structural variations of our MQW probe structures and A r ion beam parameter variations. An intervening superlattice placed in the surface barrier region of one of our MQW probe structures is effe ctive in reducing observed defects. Bombardment carried out at a varie ty of substrate temperatures (78 K, room temperature, and 150-degrees- C) reveal decreased damage profiles at the lowest temperature.