CONTINUOUS WRITING METHOD FOR HIGH-SPEED ELECTRON-BEAM DIRECT WRITINGSYSTEM HL-800D

Citation
M. Kawano et al., CONTINUOUS WRITING METHOD FOR HIGH-SPEED ELECTRON-BEAM DIRECT WRITINGSYSTEM HL-800D, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2323-2326
Citations number
6
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
11
Issue
6
Year of publication
1993
Pages
2323 - 2326
Database
ISI
SICI code
1071-1023(1993)11:6<2323:CWMFHE>2.0.ZU;2-6
Abstract
Hitachi has developed a new e-beam direct writing system named HL-800D [Y. Sakitani, H. Yoda, Y. Shibata, T. Yamazaki, and K. Ohbitu, J. Vac . Sci. Technol. B 10, 2759 (1992)]. This system has been developed for mass production of ultra-large scale integrated circuits such as a 25 6M-DRAM manufactured with high accuracy and high throughput. To achiev e a productive level of throughput, this system employs a continuous w riting method with variable stage speed. In the method, an e-beam trac es a moving wafer stage accurately using deflections during continuous writing, and the wafer stage moves with the most suitable speed depen ding on the writing pattern density. The continuous writing method mak es considerable improvement in throughput compared with a conventional ''step and repeat'' stage moving method. Stitching accuracy is confir med by test writing.