INVESTIGATION OF THE LONGITUDINAL AND LATERAL DISTRIBUTION OF IMPLANTATION-INDUCED DAMAGE IN GAAS INGAAS HETEROSTRUCTURES/

Ar+ ion implantations on unpatterned and patterned GaAs/InGaAs samples were carried out to study the depth and the lateral spread of the dam age profile. The photoluminescence emission intensity from quantum wel ls located at different positions in the layer structure was used as a local probe for the induced damage. An unexpected wide range of the d amage profile is observed which can be explained in terms of accidenta l capture of ions into channels. Implantation along the axial channels of the zinc-blende crystal leads to an additional increase of the lon gitudinal damage range. It is shown that the lateral damage distributi on under the implantation masks of ions implanted in a random directio n is clearly broader than that of ions implanted along the [110] axis.