O. Schilling et al., OPTICAL ANALYSIS OF QUANTUM-CONFINED STARK-EFFECT IN OVERGROWN INGAASINP QUANTUM WIRES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2556-2559
The quantum confined Stark effect has been investigated in InGaAs/InP
quantum wires with widths down to 20 nm. The wires were fabricated by
electron beam lithography and wet chemical etching using titanium as m
ask material. By metalorganic vapor phase epitaxy overgrowth high quan
tum efficiencies are achieved even for very narrow wire structures. We
observe blue shifts in the luminescence peak energy up to 20 meV due
to lateral quantization. After evaporating a semitransparent 50 angstr
om thick gold Schottky contact we observe red shifts of the luminescen
ce energy up to 25 meV due to the quantum confined Stark effect by app
lying a reverse bias voltage of typically 1 V.