DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSIONSTRUCTURES

Using high resolution electron beam lithography it has been possible t o directly pattern planar structures which exhibit lateral conduction characteristics that are consistent with field emission. Two terminal and three terminal structures have been fabricated in a tungsten layer on an insulating substrate using a combination of an aluminum lift-of f and dry etching. By careful control of the electrode spacings it has been possible to ensure that the emission occurs for voltages less th an 100 V. In the three terminal structures fabricated a high proportio n of the emitted current reaches the collector.