DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSIONSTRUCTURES

Citation
Acf. Hoole et al., DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSIONSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2574-2578
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
11
Issue
6
Year of publication
1993
Pages
2574 - 2578
Database
ISI
SICI code
1071-1023(1993)11:6<2574:DPLPTL>2.0.ZU;2-K
Abstract
Using high resolution electron beam lithography it has been possible t o directly pattern planar structures which exhibit lateral conduction characteristics that are consistent with field emission. Two terminal and three terminal structures have been fabricated in a tungsten layer on an insulating substrate using a combination of an aluminum lift-of f and dry etching. By careful control of the electrode spacings it has been possible to ensure that the emission occurs for voltages less th an 100 V. In the three terminal structures fabricated a high proportio n of the emitted current reaches the collector.