INTEGRATED APPROACH TO QUANTUM-DOT FABRICATION

Authors
RISHTON SA LEE YH MILKOVE KR HONG JM BOEGLI V DEFRANZA M SIVAN U KERN DP
Citation
Sa. Rishton et al., INTEGRATED APPROACH TO QUANTUM-DOT FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2607-2611
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
6
Year of publication
1993
Pages
2607 - 2611
Database
ISI
SICI code
1071-1023(1993)11:6<2607:IATQF>2.0.ZU;2-H
Abstract
A method of fabricating individually contacted quantum dots of dimensi ons down to 0.14 mum is presented. The dots are defined by electron-be am lithography and electron cyclotron resonance etching. The GaAs/AlGa As heterostructures include additional layers beneath the defined dots to serve as a spectrometer to analyze the level structure in the dots . The conductance of the dots scales well with area over six orders of magnitude.