Rl. Kostelak et al., PRINTING OF PHASE-SHIFTING MASK DEFECTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2705-2713
Using both simulations and experimental data, the impact of defect typ
e, size, and location for the three leading phase-shifting techniques,
alternate aperture, sized rim shifter, and attenuated, was investigat
ed. Location of the defect was determined to play a major role in the
printability of a given defect. Specifically, comer defects located on
the inner edge of a rim-shifted pattern posed significant detectabili
ty and printability problems. As expected for the vast majority of def
ects, phase-shifting approaches enhanced the printability of the defec
t. However, the attenuated approach revealed a unique class of defects
that caused much less linewidth deviation than their counterparts on
conventional masks. These were the missing chromium/unetched quartz de
fects. A systematic study of the impact of phase, size, and position f
or both classes of defects: extra shifter and missing chromium, on an
attenuated phase-shifting masks revealed that the design of the attenu
ated blank was critical in minimizing the impact of defects. Two possi
ble blank configurations were proposed: a partially embedded shifter a
nd a fully embedded configuration. By intelligently selecting the desi
gn of the attenuated blank, the impact of defect printability could be
reduced.