ADVANCED DYNAMIC PROCESS SIMULATION FOR AN EXCIMER-LASER LITHOGRAPHY

This article proposes a dynamic process window matrix for effective li thography development based on accurate resist profile simulation. Thi s process window is defined on an exposure dose-defocus plane as the a rea that is determined by linewidth error and sidewall angle at the re sist thickness corresponding to the maximum and minimum linewidths. Th is window concept can give a practical process margin, since standing wave effects are also taken into consideration. This method is applied to the analysis of chemically amplified resist system for KrF excimer laser lithography.