EFFECT OF LOW-SOLUBILITY SURFACE-LAYER ON DEVELOPMENT OF AZ-PF514

Authors
KRASNOPEROVA AA TURNER SW OCOLA L CERRINA F
Citation
Aa. Krasnoperova et al., EFFECT OF LOW-SOLUBILITY SURFACE-LAYER ON DEVELOPMENT OF AZ-PF514, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2829-2833
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
6
Year of publication
1993
Pages
2829 - 2833
Database
ISI
SICI code
1071-1023(1993)11:6<2829:EOLSOD>2.0.ZU;2-C
Abstract
Effect of prebake conditions on dissolution of Hoechst AG positive che mically amplified resist AZ-PF514 has been studied. It was shown that the dissolution of the resist was nonlinear, with the retardation time strongly dependent on prebake conditions. Plasma etching of the top l ayer of the resist has been proposed in order to eliminate undesirably long development retardation time of the high temperature baked resis t. It was shown that the roughness of the developing resist film was c aused by the surface layer of low solubility.