SIMULATION OF LOCALLY ENHANCED 3-DIMENSIONAL DIFFUSION IN CHEMICALLY AMPLIFIED RESISTS

Evidence from simulation, linewidth measurements, and in situ Fourier- transform infrared (FTIR) data are presented which suggests that a typ e II diffusion front is moving through positive tone t-BOC material du ring postexposure bake. A steady increase in linespace of 50 nm/min is observed in IBM APEX-E and even faster rates can be found in generic t-BOC resists. The simultaneous reaction and three-dimensional deprote ction dependent diffusion simulation was carried out with a massively parallel approach. A novel FTIR measurement of transmission versus tim e of patterned and unpatterned wafers during postexposure bake corrobo rated scanning electron microscope linewidth measurements.