STUDY OF ELECTRON-BEAM PATTERNING OF RESIST ON TUNGSTEN X-RAY MASKS

In this article, the effects of tungsten and resist thickness and expo sure energy on tungsten x-ray masks have been investigated making use of both experimental and theoretical data. It was found that proximity effects in the patterned resist can be reduced by an appropriate choi ce of resist and absorber thickness as well as increased electron ener gy. The control of linewidths for isolated lines, clustered lines, and isolated spaces is sufficient for 0.25 mum design rules without proxi mity correction and with good process latitude. In addition, it was fo und that this process has resolution down to 0.1 mum.