K. Fujii et al., SUB-HALF-MICRON METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION USING A COMPACT SYNCHROTRON-RADIATION LITHOGRAPHY SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2897-2901
In order to evaluate the usefulness of the compact synchrotron radiati
on (SR) lithography system using a superconducting synchrotron light s
ource ''AURORA,'' sub-half-micron metal-oxide-semiconductor devices we
re fabricated. This article describes the SR lithography system includ
ing x-ray masks, the device fabrication processes, and the characteris
tics of the resulting devices. Excellent overlay accuracy, better than
90 nm (3 sigma), was obtained using chromatic bifocus alignment optic
s in most levels. Though no radiation effect is observed in initial de
vice characteristics, hot-electron-induced instability is observed in
2000 mJ/cm2-irradiated devices. If high-speed resists with 100-200 mJ/
cm2 sensitivity were used, the instability would be reduced to a negli
gible level.