SUB-HALF-MICRON METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION USING A COMPACT SYNCHROTRON-RADIATION LITHOGRAPHY SYSTEM

In order to evaluate the usefulness of the compact synchrotron radiati on (SR) lithography system using a superconducting synchrotron light s ource ''AURORA,'' sub-half-micron metal-oxide-semiconductor devices we re fabricated. This article describes the SR lithography system includ ing x-ray masks, the device fabrication processes, and the characteris tics of the resulting devices. Excellent overlay accuracy, better than 90 nm (3 sigma), was obtained using chromatic bifocus alignment optic s in most levels. Though no radiation effect is observed in initial de vice characteristics, hot-electron-induced instability is observed in 2000 mJ/cm2-irradiated devices. If high-speed resists with 100-200 mJ/ cm2 sensitivity were used, the instability would be reduced to a negli gible level.