Aw. Yanof et al., X-RAY MASK MEMBRANE MOTION IN NARROW-GAP LITHOGRAPHY - HYDRODYNAMIC MODEL AND EXPERIMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2920-2925
The viscosity of the gas in the proximity gap between x-ray mask and s
ilicon wafer causes damping of any membrane motion. As x ray is extend
ed to future integrated circuit generations, this effect becomes incre
asingly significant, because the gap must be rapidly scaled down to pe
rmit resolution of finer lithographic features. Damping is much greate
r at a reduced gap. Damping can be beneficial in reducing unwanted flu
ctuations in the gap due to vibration, convection, or ambient sound. T
he longer settling time following gap adjustment, however, can be detr
imental to the throughput of x-ray steppers. This article introduces s
imple hydrodynamic models, formulas, and numerical algorithms to calcu
late membrane response to adjustments in gap setting. It applies the a
nalysis to a variety of mask formats, including advanced ''pedestal''
design. Time constants of several seconds are shown to result from gap
setting < 10 mum, which may be needed for 0.12 mum proximity x-ray li
thography.