FABRICATION OF INGAAS INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES/

Authors
PARK CY YOO JB PARK C HYUN KS OH DK LEE YH LEE C PARK HM
Citation
Cy. Park et al., FABRICATION OF INGAAS INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 974-977
Citations number
22
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
974 - 977
Database
ISI
SICI code
1071-1023(1995)13:3<974:FOIIAP>2.0.ZU;2-#